TGF4250-SCC

Product Data Sheet December 16, 2002 DC - 10.5 GHz Discrete HFET TGF4250-SCC Key Features and Performance Nominal Pout of 34 dBm at 8.5 GHz Nominal Gain of 8.5 dB at 8.5 GHz Nominal PAE of 53% at 8.5 GHz Suitable for high reliability applications 4800 µm x 0.5 µm FET Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in) Bias at 8 Volts, 384 mA Cellular Base Stations High-reliability space Military Primary Applications www.DataSheet.net/ Description The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain, and 53% PAE. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4250-SCC is readily assembled using automatic equipment. For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet December 16, 2002 TGF4250-SCC TABLE I MAXIMUM RATINGS SYMBOL VDS VGS PD TCH TSTG TM PARAMETER 1/ Drain to Source Voltage Gate to Source Voltage Range Power Dissipation Operating Channel Temperature Storage Temperature Mou...