TGF2023-20
90 Watt Discrete Power GaN on SiC HEMT
Key Features
Frequency Range: DC - 18 GHz 49.6 dBm Nominal Psat at 3 GHz 52% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 2 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 4.56 x 0.10 mm
Primary Applications
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