RJL6032DPP-M0

Preliminary Datasheet RJL6032DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 3.3  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  High speed switching  Built in fast recovery diode R07DS0250EJ0100 Rev.1.00 Jan 27, 2010 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3. STch = 25C, Tch  150C www.DataSheet.net/ (Ta = 25C) Symbol VDSS VGSS ID ID (pulse) Note1 IAPNote3 Pch Note 2 ch-c Tch Tstg Value 600 30 2 8 2 30.6 4.08 150 –55 to +150 Unit V V A A A W C/W C C R07DS0250EJ0100 Rev.1.00 Jan 27, 2010 Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.co.kr/ RJL6032DPP-M0 Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gage charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(...