Preliminary Datasheet
RJL6014DPP
Silicon N Channel MOS FET High Speed Power Switching
Features
Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C) Low on-resistance RDS(on) = 0.52 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching
R07DS0262EJ0200 (Previous: REJ03...
