Data Sheet No. 2N5152L
Type 2N5152L
Geometry 9201 Polarity NPN Qual Level: JAN - JANS
Features: • • • • Silicon power t...
Data Sheet No. 2N5152L
Type 2N5152L
Geometry 9201 Polarity
NPN Qual Level: JAN - JANS
Features: Silicon power
transistor for use in high speed switching applications. Housed in a TO-5 case. Also available in chip form using the 9201 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/544 which Semicoa meets in all cases.
Generic Part Number: 2N5152L
REF: MIL-PRF-19500/544
TO-5
Maximum Ratings
TC = 25 C unless otherwise specified
o
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW < 8.3 ms, < 1% duty cycle Reverse Pulse Energy Power Disipation TA = 25oC ambient o Derate above 25 C Operating Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC IC
Rating
80 100 5.5 2 10 15
Unit
V V V A A mJ Watt o mW/ C
o
PT TJ TSTG
1.0 5.7 -65 to +200 -65 to +200
C C
o
Data Sheet No. 2N5152L
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage IC = 100 mA, IB = 0, pulsed Base-Emitter Cutoff Current VEB = 4 V, IC = 0 VEB = 5.5 V, IC = 0 Collector-Emitter Cutoff Current VCE = 60 V, VBE = 0 VCE = 100 V, VBE = 0 VCE = 40 V, IB = 0 VCE = 60 V, VBE = -2 V, TC = 150 C
o
Symbol
V(BR)CBO IEBO1 IEBO2 ICES1 ICES2 ICEO ICEX
Min
80 -------------
Max
--1.0 1.0 1.0 1.0 50 500
Unit
V µA mA µA mA µA µA
ON Characteristics
Forward Current Transfer Ratio IC = 50 mA, VCE = 5 V IC = 2.5 A, VCE = 5 V, pulsed IC = 5.0 A, V...