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MT29F16G08MAAWP Dataheets PDF



Part Number MT29F16G08MAAWP
Manufacturers Micron
Logo Micron
Description NAND Flash Memory
Datasheet MT29F16G08MAAWP DatasheetMT29F16G08MAAWP Datasheet (PDF)

Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory Features NAND Flash Memory MT29F16G08MAAWP, MT29F32G08QAAWP, MT29F64G08TAAWP, MT29F16G08MAAC3, MT29F32G08RAAC3, MT29F64G08UAAC4, MT29F32G08RAAC6, MT29F64G08UAAC6, MT29F128G08WAAC6 Features • Open NAND Flash Interface (ONFI) 1.0 compliant • Multilevel cell (MLC) technology • Organization – Page size: x8: 4,314 bytes (4,096 + 218 bytes) – Block size:128 pages (512K + 27K bytes) – Plane size: 2,048 blocks – Device size: 16Gb.

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Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory Features NAND Flash Memory MT29F16G08MAAWP, MT29F32G08QAAWP, MT29F64G08TAAWP, MT29F16G08MAAC3, MT29F32G08RAAC3, MT29F64G08UAAC4, MT29F32G08RAAC6, MT29F64G08UAAC6, MT29F128G08WAAC6 Features • Open NAND Flash Interface (ONFI) 1.0 compliant • Multilevel cell (MLC) technology • Organization – Page size: x8: 4,314 bytes (4,096 + 218 bytes) – Block size:128 pages (512K + 27K bytes) – Plane size: 2,048 blocks – Device size: 16Gb: 4,096 blocks; 32Gb: 8,192 blocks; 64Gb: 16,384 blocks; 128Gb: 32,768 blocks • READ performance – Random READ: 50µs – Sequential READ: 25ns • WRITE performance – PROGRAM PAGE: 900µs (TYP) – BLOCK ERASE: 3.5ms (TYP) • Endurance – 10,000 PROGRAM/ERASE cycles (8-bit ECC1) • Data retention: 10 years • First block (block address 00h) guaranteed to be valid when shipped from factory1 • Industry-standard basic NAND Flash command set • Advanced command set – PROGRAM PAGE CACHE MODE – PAGE READ CACHE MODE – One-time programmable (OTP) commands – Two-plane commands – Interleaved die operations – READ UNIQUE ID (contact factory) • Operation status byte provides a software method of detecting: – Operation completion – Pass/fail condition – Write-protect status • Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM or ERASE cycle completion • WP# signal: entire device hardware write protect • RESET required after power-up • INTERNAL DATA MOVE operations supported within the plane from which data is read Figure 1: 48-Pin TSOP Type 1 Options www.DataSheet.net/ • Density • Device width: x8 • Configuration: Package # of die # of CE# # of R/B# I/O TSOP/LGA 1 1 1 Common TSOP 2 2 2 Common TSOP 4 2 2 Common LGA 2 2 2 Separate LGA 4 2 2 Separate LGA 8 4 4 Separate • VCC: 2.7–3.6V • Package: 48 TSOP type I (lead-free plating) – 52-pad ULGA – 52-pad VLGA – 52-pad LLGA • Operating temperature: • Commercial temperature (0°C to 70°C) – Extended temperature (–40°C to +85°C) Notes: 1. For details, see “Error Management” on page 88. 2. For part numbering and markings, see Figure 2 on page 2. PDF: 09005aef8278ee3f / Source: 09005aef81f17540 16gb_nand_mlc_l52a__1.fm -Rev. D 5/08 EN 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Datasheet pdf - http://www.DataSheet4U.co.kr/ Micron Confidential and Proprietary 16, 32, 64, 128Gb NAND Flash Memory Part Numbering Information Part Numbering Information Micron NAND Flash devices are available in several different configurations and densities (see Figure 2). Figure 2: Part Number Chart MT 29F 16G 08 Micron Technology Product Family 29F = Single-supply NAND Flash memory M A A WP ES :A Design Revision A = First revision Production Status Blank = Production ES = Engineering sample MS = Mechanical sample QS = Qualifi.


29F16G08MAA MT29F16G08MAAWP MT29F32G08QAAWP


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