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TGA4514 Dataheets PDF



Part Number TGA4514
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description 2 Watt Ka-Band Power Amplifier
Datasheet TGA4514 DatasheetTGA4514 Datasheet (PDF)

TGA4514 2 Watt Ka-Band Power Amplifier Key Features • • • • • • • • • Typical Frequency Range: 31 - 35 GHz 33.5 dBm Nominal Psat @ Vd = 7V 31.5 dBm Nominal P1dB IMD3: 31dBc at Pout/tone=22dBm 18 dB Nominal Gain Bias 6 - 7 V, 1150 mA 0.25 um 2MI pHEMT Technology Chip Dimensions 4.0 x 3.2 x 0.1 mm (0.161 x 0.128 x 0.004) in Measured Performance Bias Conditions: Vd = 6 V, Id = 1150 mA Primary Applications • • • Point-to-Point Radio Military Radar Systems Ka Band Sat-Com 30 Gain & R eturn Loss (d.

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TGA4514 2 Watt Ka-Band Power Amplifier Key Features • • • • • • • • • Typical Frequency Range: 31 - 35 GHz 33.5 dBm Nominal Psat @ Vd = 7V 31.5 dBm Nominal P1dB IMD3: 31dBc at Pout/tone=22dBm 18 dB Nominal Gain Bias 6 - 7 V, 1150 mA 0.25 um 2MI pHEMT Technology Chip Dimensions 4.0 x 3.2 x 0.1 mm (0.161 x 0.128 x 0.004) in Measured Performance Bias Conditions: Vd = 6 V, Id = 1150 mA Primary Applications • • • Point-to-Point Radio Military Radar Systems Ka Band Sat-Com 30 Gain & R eturn Loss (dB ) 20 10 GAIN www.DataSheet.net/ 0 -10 -20 -30 28 29 30 31 32 33 34 35 ORL IRL 36 37 38 Product Description The TriQuint TGA4514 is Power Amplifier for Kaband applications. The part is designed using TriQuint’s proven standard 0.25 um gate Power pHEMT production process. The TGA4514 provides a nominal 33.5 dBm of output power at an input power level of 20 dBm with a small signal gain of 18 dB. Nominal IMD3 is 31dBc at Pout/tone of 22 dBm. The part is ideally suited for low cost markets such as Point-to-Point Radio and Ka-band Sat-Com. Frequency (GHz) 35 Psat @ Pin= 20dBm (dBm) 34 33 32 31 30 29 28 30 Bias Conditions: Vd = 6/7 V, Id = 1150 mA Vd = 7 V Vd = 6 V 31 32 33 34 35 Frequency (GHz) 36 37 Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ July 2009 © Rev A TGA4514 Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Vd Vg Id Ig Pin Tchannel 1/ Drain Voltage Gate Voltage Range Drain Current Gate Current Range Input Continuous Wave Power Channel Temperature Parameter Drain to Gate Voltage Value 13 V 8V -5 to 0 V 2.5 A -9 to 210 mA 27 dBm 200 °C Notes 2/ 2/ 2/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. 2/ Table II Recommended Operating Conditions www.DataSheet.net/ Symbol Vd Id Id_Drive Vg 1/ Drain Voltage Drain Current Parameter 1/ Value 6V 1150 mA 1500 mA -0.45 V Drain Current under RF Drive Gate Voltage See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Datasheet pdf - http://www.DataSheet4U.co.kr/ July 2009 © Rev A TGA4514 Table III RF Characterization Table Bias: Vd = 6 V, Id = 1150 mA, Vg = -0.45 V Typical SYMBOL Gain IRL ORL Psat P1dB IMD3 PARAMETER Small Signal Gain Input Return Loss Output Return Loss Saturated Output Power @ Pin = 20dBm Output Power @ 1dB Gain Compression IMD3 @ Pout/Tone = 22dBm, Freq = 33GHz TEST CONDITIONS F = 31 - 35 GHz F = 31 - 35 GHz F = 31 - 35 GHz F = 31 - 35 GHz F = 31 - 35 GHz F = 31 - 35 GHz NOMINAL 18 -7 -10 32.5 32 31 UNITS dB dB dB dBm dBm dBc www.DataSheet.net/ 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Datasheet pdf - http://www.DataSheet4U.co.kr/ July 2009 © Rev A TGA4514 Table IV Power Dissipation and Thermal Properties Parameter Maximum Power Dissipation Test Conditions Tbaseplate = 70 °C Value Pd = 10 W Tchannel = 199 °C θjc = 11.5 °C/W Tchannel = 149 °C Tm = 1.1E+6 Hrs Thermal Resistance, θjc Vd = 6 V Id = 1.15 A Pd = 6.9 W Tbaseplate = 70 ºC Vd = 6 V Id = 1.45 A Pout = 32.5 dBm Pd = 6.9 W Tbaseplate = 70 ºC 30 Seconds Thermal Resistance, θjc Under RF Drive @ 33GHz θjc = 11.5 °C/W Tchannel = 149 °C Tm = 1.1E+6 Hrs Mounting Temperature Storage Temperature 320 °C -65 to 150 °C www.DataSheet.net/ Median Lifetime (Tm) vs. Channel Temperature 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Datasheet pdf - http://www.DataSheet4U.co.kr/ July 2009 © Rev A TGA4514 Measured Data 22 Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp. 20 18 Gain (dB) 16 14 12 10 28 29 30 31 32 33 34 35 36 37 38 Fre que ncy (GHz) www.DataSheet.net/ 35 34 Psat @ Pin = 20dBm (dBm ) 33 32 31 30 29 28 30 31 Bias Conditions: Vd = 6/7 V, Id = 1150 mA, Room Temp. Vd = 7 V Vd = 6 V 32 33 34 35 36 37 Frequency (GHz) 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Datasheet pdf - http://www.DataSheet4U.co.kr/ July 2009 © Rev A TGA4514 Measured Data Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp. 0 -5 -10 -15 -20 -25 -30 -35 28 29 30 31 32 33 www.DataSheet.net/ Input Return Loss (dB) 34 35 36 37 38 Fre que ncy (GHz) 0 -5 O utput Return Loss (dB) -10 -15 -20 -25 -30 -35 28 29 30 31 32 33 34 35 36 37 38 Fre que ncy (GHz) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] Datasheet pdf - http://www.DataSheet4U.co.kr/ July 2009.


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