TGA4514
2 Watt Ka-Band Power Amplifier
Key Features
• • • • • • • • • Typical Frequency Range: 31 - 35 GHz 33.5 dBm Nominal Psat @ Vd = 7V 31.5 dBm Nominal P1dB IMD3: 31dBc at Pout/tone=22dBm 18 dB Nominal Gain Bias 6 - 7 V, 1150 mA 0.25 um 2MI pHEMT Technology Chip Dimensions 4.0 x 3.2 x 0.1 mm (0.161 x 0.128 x 0.004) in
Measured Performance
Bias Conditions: Vd = 6 V, Id = 1150 mA
Primary Applications
• • • Point-to-Point Radio Military Radar Systems Ka Band Sat-Com
30 Gain & R eturn Loss (dB ) 20 10
GAIN
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0 -10 -20 -30 28 29 30 31 32 33 34 35
ORL IRL
36 37 38
Product Description
The TriQuint TGA4514 is Power Amplifier for Kaband applications. The part is designed using TriQuint’s proven standard 0.25 um gate Power pHEMT production process. The TGA4514 provides a nominal 33.5 dBm of output power at an input power level of 20 dBm with a small signal gain of 18 dB. Nominal IMD3 is 31dBc at Pout/tone of 22 dBm. The part is ideally suited for low cost markets such as Point-to-Point Radio and Ka-band Sat-Com.
Frequency (GHz)
35 Psat @ Pin= 20dBm (dBm) 34 33 32 31 30 29 28 30
Bias Conditions: Vd = 6/7 V, Id = 1150 mA
Vd = 7 V Vd = 6 V
31
32
33 34 35 Frequency (GHz)
36
37
Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
[email protected]
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
July 2009 © Rev A
TGA4514
Table I Absolute Maximum Ratings 1/
Symbol
Vd-Vg Vd Vg Id Ig Pin Tchannel 1/ Drain Voltage Gate Voltage Range Drain Current Gate Current Range Input Continuous Wave Power Channel Temperature
Parameter
Drain to Gate Voltage
Value
13 V 8V -5 to 0 V 2.5 A -9 to 210 mA 27 dBm 200 °C
Notes
2/
2/
2/
These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV.
2/
Table II Recommended Operating Conditions
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Symbol
Vd Id Id_Drive Vg 1/ Drain Voltage Drain Current
Parameter 1/
Value
6V 1150 mA 1500 mA -0.45 V
Drain Current under RF Drive Gate Voltage
See assembly diagram for bias instructions.
2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
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Datasheet pdf - http://www.DataSheet4U.co.kr/
July 2009 © Rev A
TGA4514
Table III RF Characterization Table
Bias: Vd = 6 V, Id = 1150 mA, Vg = -0.45 V Typical SYMBOL
Gain IRL ORL Psat P1dB IMD3
PARAMETER
Small Signal Gain Input Return Loss Output Return Loss Saturated Output Power @ Pin = 20dBm Output Power @ 1dB Gain Compression IMD3 @ Pout/Tone = 22dBm, Freq = 33GHz
TEST CONDITIONS
F = 31 - 35 GHz F = 31 - 35 GHz F = 31 - 35 GHz F = 31 - 35 GHz F = 31 - 35 GHz F = 31 - 35 GHz
NOMINAL
18 -7 -10 32.5 32 31
UNITS
dB dB dB dBm dBm dBc
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3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
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Datasheet pdf - http://www.DataSheet4U.co.kr/
July 2009 © Rev A
TGA4514
Table IV Power Dissipation and Thermal Properties
Parameter
Maximum Power Dissipation
Test Conditions
Tbaseplate = 70 °C
Value
Pd = 10 W Tchannel = 199 °C θjc = 11.5 °C/W Tchannel = 149 °C Tm = 1.1E+6 Hrs
Thermal Resistance, θjc
Vd = 6 V Id = 1.15 A Pd = 6.9 W Tbaseplate = 70 ºC Vd = 6 V Id = 1.45 A Pout = 32.5 dBm Pd = 6.9 W Tbaseplate = 70 ºC 30 Seconds
Thermal Resistance, θjc Under RF Drive @ 33GHz
θjc = 11.5 °C/W Tchannel = 149 °C Tm = 1.1E+6 Hrs
Mounting Temperature Storage Temperature
320 °C -65 to 150 °C
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Median Lifetime (Tm) vs. Channel Temperature
4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
[email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
July 2009 © Rev A
TGA4514
Measured Data
22
Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp.
20
18 Gain (dB)
16
14
12
10 28 29 30 31 32 33 34 35 36 37 38 Fre que ncy (GHz)
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35 34 Psat @ Pin = 20dBm (dBm ) 33 32 31 30 29 28 30 31
Bias Conditions: Vd = 6/7 V, Id = 1150 mA, Room Temp.
Vd = 7 V
Vd = 6 V
32
33
34
35
36
37
Frequency (GHz)
5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
[email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
July 2009 © Rev A
TGA4514
Measured Data
Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp.
0 -5 -10 -15 -20 -25 -30 -35 28 29 30 31 32 33
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Input Return Loss (dB)
34
35
36
37
38
Fre que ncy (GHz) 0 -5 O utput Return Loss (dB) -10 -15 -20 -25 -30 -35 28 29 30 31 32 33 34 35 36 37 38 Fre que ncy (GHz)
6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
[email protected]
Datasheet pdf - http://www.DataSheet4U.co.kr/
July 2009.