TGA4510

Product Data Sheet August 5, 2008 29-37 GHz Compact Driver Amplifier Key Features TGA4510 0.25 um pHEMT Technology >16 dB Nominal Gain @ 30 GHz 16 dBm Nominal Psat Bias Conditions: Vd = 6V, Id = 60 mA Compact Chip Size: 1.1 x 0.8 x 0.1 mm3 Primary Applications LMDS Point-to-Point Base Stations Fixtured Measured Performance Bias Conditions: Vd = 6V, Id = 60 mA ± 5% 20 18 16 14 Gain (dB) 12 www.DataSheet.net/ 10 8 6 4 2 0 26 28 30 32 34 Frequency (GHz) 36 38 40 20 18 16 14 Pout (dBm) 12 10 8 6 4 2 0 26 28 30 , Pwr(in) 4 2 0 -2 -4 -6 -8 -10 32 34 Frequency (GHz) 36 38 40 Note: Datasheet is subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 TGA4510 TABLE I MAXIMUM RATINGS 1/ Symbol Parameter V+ Positive Supply Voltage + I Positive Supply Current (Quiescent) |IG| Gate Current PD Power Dissipation PIN Input Continuous Wave Power TCH Operating Channel Temperature TM Mounting Temperature (30 seconds) TSTG Storage Temperature Value 8V 81mA 3.5 mA TBD 18 dBm 150 °C 320 °C -65 °C to 150 °C Notes 2/ 3/, 4/ 1/ 2/ 3/ 4/ These values represent the maximum operable values of this device Total current for the entire MMIC These ratings apply to each individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction tem...