TGA2510-TS

Ku Band, 2 Watt Power Amplifier TGA2510-TS Key Features and Performance 34 dBm Midband Psat 26 dB Nominal Gain 7 dB Typical Input Return Loss 12 dB Typical Output Return Loss 12.5 - 17 GHz Frequency Range Directional Power Detector with Reference 0.25µm pHEMT 3MI Technology Bias Conditions: 7.5V, 650mA Thermal Spreader Dimensions: 2.159 x 1.499 mm Preliminary Measured Performance Bias Conditions: Vd=7.5V Id=650mA Primary Applications www.DataSheet.net/ VSAT Point to Point Note: Datasheet is subject to change without notice. 1 TriQuint Semiconductor www.triquint.com (972)994-8465 Fax: (972)994-8504 [email protected] November 2011 © Rev C Datasheet pdf - http://www.DataSheet4U.co.kr/ TGA2510-TS TABLE I ABSOLUTE MAXIMUM RATINGS Symbol VD VG ID | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ Drain Voltage Gate Voltage Range Drain Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Parameter Value 8V -5V to 0V 1300 mA 18 mA 24 dBm 10.4 W 200 C 320 C -65 to 150 C 0 0 0 Notes 1/ 2/ 1/ 1/ 2/ 1/ 1/ 2/ 1/ 2/ 3/ These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70°C Junction operating temperature will directly affect the device median lifetime. For maximum life, it is recommended that channel temperatures be ma...