Product Data Sheet
August 5, 2008
Ku Band 2 Watt Packaged Amplifier
• • • • • • • • •
TGA2510-SG
33.5 dBm Midband Psat 25 dB Nominal Gain 7 dB Typical Input Return Loss 10 dB Typical Output Return Loss 12.5 - 17 GHz Frequency Range Directional Power Detector with Reference 0.25µm pHEMT 3MI Technology Bias Conditions: 7.5V, 650mA Package Dimensions: 9.4 x 6.4 x 1.8 mm (0.370 x 0.250 x 0.071 inches)
Key Features and Performance
Preliminary Measured Performance
Bias Conditions: Vd=7.5V Id=650mA
30 25 20 15 10 5 0 10 11 12 13 14 15 16 17 18 19 20 10 S21 S11 5 S22 0 -5 -10 -15 -20
Primary Applications
S11,S22 (dB)
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S21 (dB)
• •
VSAT Point to Point
Frequency (GHz)
36 Pout @ Pin=+14dBm (dBm) 35 34 33 32 31 30 29 28 27 26 11 12 13 14 15 16 17 18 19
Pout PAE
60 50 45 40 35 30 25 20 15 10
Frequency (GHz)
Note: Datasheet is subject to change without notice.
PAE @ Pin=+14dBm (%)
55
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008
TGA2510-SG
TABLE I MAXIMUM RATINGS Symbol VD VG ID | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Parameter Value 8V -5V to 0V 1300 mA 18 mA 24 dBm 6.15 W 150 C 320 C -65 to 150 0C
0 0
Notes 1/ 2/ 1/ 1/ 2/ 1/ 1/ 2/ 1/ 2/ 3/ 4/
These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70°C When operated at this bias condition with a baseplate temperature of 70°C, the MTTF is reduced to 1.0E+6 hours
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Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
TABLE II THERMAL INFORMATION Parameter RΘJC Thermal Resistance (Channel to Backside of Package) Test Conditions VD = 7.5V ID = 650mA PDISS = 4.88W TBASE = 70°C TCH (°C) 132.3 RΘJC (°C/W) 12.8 MTTF (hrs) 4.8E+6
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008
TABLE III RF CHARACTERIZATION TABLE (TA = 25°C, Nominal) (Vd = 7.5V, Id = 650mA ±5%) Symbol Parameter Test Conditions Typ
TGA2510-SG
Units
Notes
Gain
Small Signal Gain
F = 12.5 – 16 GHz
25
dB
IRL
Input Return Loss
F = 12.5 – 16 GHz
7
dB
ORL
Output Return Loss Output Power @ Pin = +14dBm Power Added Efficiency @ Pin = +14dBm
F = 12.5 – 16 GHz
10
dB
PWR
F = 12.5 – 16 GHz
33.5
dBm
PAE
F = 12.5 – 16 GHz
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29
%
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements.
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008
30 25 20
Typical Fixtured Performance Id=650mA
TGA2510-SG
Vd=5V Vd=7.5V
S21 (dB)
15 10 5 0 10 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 10 11 12 13 14 15 16 17 18 19 20 11 12 13 14 15
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16
17
18
19
20
Frequency (GHz)
Vd=5V Vd=7.5V
S11 (dB)
Frequency (GHz)
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008
0 -2 -4 -6
Typical Fixtured Performance Id=650mA
TGA2510-SG
Vd=5V Vd=7.5V
S22 (dB)
-8 -10 -12 -14 -16 -18 -20 10 0 -10 -20 11 12 13 14 15
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16
17
18
19
20
Frequency (GHz)
Vd=5V Vd=7.5V
S12 (dB)
-30 -40 -50 -60 -70 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008
TGA2510-SG Typical Fixtured Performance Id=650mA
37 36
Pout @ Pin=+14dBm (dBm)
65 Pout Vd=7.5V PAE Vd=7.5V Pout Vd=5V PAE Vd=5V 60 55 50 45 40 35 30 25 20 15 10 11 12 13 14 15
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35 34 33 32 31 30 29 28 27 26
16
17
18
19
Frequency (GHz)
PAE @ Pin=+14dBm (%)
6
Datasheet pdf - http://www.DataSheet4U.co.kr/
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Product Data Sheet
August 5, 2008
40 39 38 37 36 35 34 33 32 31 30 12 18 12 6
Typical Fixtured Performance Id=800mA
TGA2510-SG
Average TOI (dBm)
13
14
15
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16
17
18
Frequency (GHz)
12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz
IMD3 (dBm)
0 -6 -12 -18 -24 -30 16
18
20
22
24
26
28
Output P.