TGA2503 13 - 17 GHz 2 Watt, 32dB Power Amplifier
Key Features and Performance
• • • • • • • 33 dBm Midband Pout 32 dB No...
TGA2503 13 - 17 GHz 2 Watt, 32dB Power Amplifier
Key Features and Performance
33 dBm Midband Pout 32 dB Nominal Gain 10 dB Typical Return Loss Built-in Directional Power Detector with Reference 0. 50 µm pHEMT Technology Bias Conditions: 7 V, 680mA Chip dimensions: 2.5 x 1.4 x 0.1 mm (98 x 55 x 4 mils)
Preliminary Measured Data
Bias Conditions: Vd=7 V Id= 680mA
40 35 30 25 20 15 10 11 12 13 14 15 16 17 18 19 5
Primary Applications
Return Loss (dB)
S21 S11 S22
0 -5 -10 -15 -20 -25
VSAT Point-to-Point
Gain (dB)
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Frequency (GHz)
35 34 33 32 31 30 29 28 27 26 25 11 12 13 14 15 16 17 18 19 Psat PAE 60 55 50 45 40 35 30 25 20 15 10
Frequency (GHz)
Note: Datasheet is subject to change without notice.
PAE@Psat (%)
Psat (dBm)
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504
[email protected] Oct 2008 © Rev -
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
TGA2503
Table I Absolute Maximum Ratings 1/
Symbol
Vd-Vg Vd Vg Id Ig Pin Tchannel 1/ Drain Voltage Gate Voltage Range Drain Current Gate Current Range Input Continuous Wave Power Channel Temperature
Parameter
Drain to Gate Voltage
Value
13 V 8V -5 to 0 V 1300 mA -18 to 18 mA 21 dBm 200 ° C
Notes
2/
2/
2/
These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only, and functional operat...
