SINGLE P-CHANNEL JFET
2N5114 SERIES
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE LOW CAPACITAN...
Description
2N5114 SERIES
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source 30V 30V -50mA 500mW -55 to 200°C -55 to 200°C 75Ω 6pF
SINGLE P-CHANNEL JFET
TO-18 BOTTOM VIEW G
2 3
D
S
1
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. BVGSS VGS(off) VGS(F) VDS(on) CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage Gate to Source Forward Voltage Drain to Source On Voltage -0.7 -1.0 -0.7 -0.5 IDSS IGSS IG ID(off) rDS(on) Drain to Source Saturation Current2 Gate Leakage Current Gate Operating Current Drain Cutoff Current Drain to Source On Resistance 5 -5 -10 -10 -10 75 100 -500 -500 -500 150 Ω pA -30 -90 -15 500 -60 500 -5 -25 500 TYP 2N5114 MIN 30 5 10 -1 -1.3 -0.8 -0.6 mA MAX 2N5115 MIN 30 3 6 -1 MAX 2N5116 MIN 30 1 4 -1 V MAX UNIT CONDITIONS IG = 1µA, VDS = 0V VDS = -15V, ID = -1nA IG = -1mA, VDS = 0V VGS = 0V, ID = -15mA VGS = 0V, ID = -7mA VGS = 0V, ID = -3mA VDS = -18V, VGS = 0V VDS = -15V, VGS = 0V VGS = 20V, VDS = 0V VDG = -15V, ID = -1mA VDS = -15V, VGS = 12V VDS = -15V, VGS = 7V VDS = -15V, VGS = 5V VGS = 0V, ID = -1mA
Linear Integrated Systems
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