TGA2576-FL

TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier Applications Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features Frequency Range: 2.5 – 6 GHz Psat: 45.5 dBm @ Pin = 26 dBm PAE: 35 % Small Signal Gain: 26 dB Bias: Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V Typical Dimensions: 11.4 x 17.3 x 3.0 mm Functional Block Diagram 1 2 10 9 3 8 4 5 www.DataSheet.net/ 7 6 General Description TriQuint’s TGA2576-FL is a packaged wideband power amplifier fabricated on TriQuint’s production-released 0.25um GaN on SiC process. Operating from 2.5 GHz to 6 GHz, it achieves 45.5 dBm saturated output power, 35% PAE and 26 dB small signal gain. Fully matched to 50 ohms and with integrated DC blocking caps on both I/O ports, the TGA2576-FL is ideally suited to support both commercial and defense related opportunities. Pin out Configuration Pin # 1,5 2,4,7,9 3 6 8 10 Symbol Vg NC RF In Vd Bot RF Out Vd Top Ordering Information Part No. TGA2576-FL ECCN 3A001.b.2.a Description 2.5-6 GHz Power Amplifier Preliminary Data Sheet: Rev A 08/25/11 - 1 of 11 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® © 2011 TriQuint Semiconductor, Inc. Datasheet pdf - http://www.DataSheet4U.co.kr/ TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier Specifications Absolute Maximum Ratings Parameter Drain to Gate Voltage, Vd - Vg Drain Voltage,Vd Gate Voltage,Vg Drain Current, Id Gate Current, Ig Power Diss...