AUIRFIZ34N

AUTOMOTIVE GRADE PD - 97778 AUIRFIZ34N Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS… Sink to Lead Creepage Distantce = 4.8mm 175°C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified* HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID 55V 40m 21A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB Full-Pak AUIRFIZ34N G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. www.DataSheet.net/ Parameter ID @ TC = 25°C ...