J569LS

Ordering number : ENN6898 2SJ569LS P-Channel Silicon MOSFET 2SJ569LS Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2078B [2SJ569] 10.0 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 0.7 1 2 3 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS Specifications Absolute Maximum Ratings at Ta=25°C www.DataSheet.co.kr 2.55 2.55 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions 0.6 Ratings --300 ±30 --5 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Tc=25°C -20 2.0 30 150 --55 to +150 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) Conditions ID=-1mA, VGS=0 IG=± 100µA, VDS=0 VDS=-300V, VGS=0 VGS=± 25V, VDS=0 VDS=-10V, ID=--1mA --1.5 Ratings min --300 ± 30 --100 ±10 --2.5 typ max Unit V V µA µA V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious ph...