2SC4467

2SC4467 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 160 V VCEO 120 V VEBO IC IB PC Tj Tstg 6 V 8 A 3 A 80(Tc=25°C) W 150 °C –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 10max 10max 120min 50min∗ 1.5max 20typ 200typ Unit µA µA V V MHz pF ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 40 10 4 10 –5 0.4 IB2 ton tstg tf (A) (µs) (µs) (µs) –0.4 0.13typ 3.50typ 0.32typ External Dimensions MT-100(TO3P) 2.0 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 4.0 19.9±0.3 20.0min 4.0max a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current IC(A) 350mA 200mA I C– V CE Characteristics (Typical) 8 150mA 100mA 75mA 6 50mA 4 20mA 2 IB=10mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 I C– V BE Temperature Characteristics (Typical) (VCE=4V) 8 2 1 IC=8A 4A 2A 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base Current IB(A) Collector Current...