2SC4455

Ordering number:EN2814 NPN Epitaxial Planar Silicon Transistor 2SC4455 High-Speed Switching Applications Features · Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity. Package Dimensions unit:mm 2061A [2SC4455] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE fT Cob * : The 2SC4455 is classified by 10mA hFE as follows : 50 P 100 70 Q 140 100 R 200 VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=10mA VCE=10V, IC=10mA VCB=5V, f=1MHz 1.3 1.3 0.44 1 : Emitter 2 : Base 3 : Collector SANYO : NP JEDEC : TO-92 EIAJ : SC-43 Ratings 40 40 15 5 200 500 40 600 150 –55 to +150 Unit V V V V mA mA mA mW ˚C ˚C Ratings min typ 50* 90 450 750 1.8 max 0.1 0.1 200* 4.0 Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other ap...