Document
Ordering number : ENN2812A
2SC4453
NPN Epitaxial Planar Silicon Transistor
2SC4453
High-Speed Switching Applications
Features
• Fast switching speed. • Low collector saturation voltage. • High gain-bandwidth product. • Small collector capacity. • Ultrasmall-sized package permitting the 2SC4453-
applied sets to be made small and slim.
Package Dimensions
unit : mm 2018B
[2SC4453]
0.4 3
0.16 0 to 0.1
1.5 0.5 2.5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCES VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
Marking : ST
* : The 2SC4453 is classified by 5mA hFE as follows :
Rank
2
3
4
hFE 50 to 100 70 to 140 100 to 200
Conditions
VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=10mA
1 0.95 0.95 2 1.9 2.9
0.8 1.1
0.5
1 : Base 2 : Emitter 3 : Collector
SANYO : CP
Ratings 40 40 15 5
200 500
40 200 150 --55 to +150
Unit V V V V mA mA mA
mW °C °C
min 50*
Ratings typ
max
Unit
0.1 µA
0.1 µA
90 200*
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2001 TS IM / D2598 HA (KT) / O278 MO, TS No.2812-1/4
2SC4453
Continued from preceding page.
Parameter
Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn ON Time Storage Time Fall Time
ton, toff Test Circuit
Symbol
Conditions
fT Cob
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
ton tstg
tf
VCE=10V, IC=10mA VCB=5V, f=1MHz IC=10mA, IB=1mA IC=10mA, IB=1mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
tstg Test Circuit
min 450
40 15
5
Ratings typ 750 1.4 0.13 0.80
8.0 6.0 12
ma.