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2SC4453 Dataheets PDF



Part Number 2SC4453
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Epitaxial Planar Silicon Transistor
Datasheet 2SC4453 Datasheet2SC4453 Datasheet (PDF)

Ordering number : ENN2812A 2SC4453 NPN Epitaxial Planar Silicon Transistor 2SC4453 High-Speed Switching Applications Features • Fast switching speed. • Low collector saturation voltage. • High gain-bandwidth product. • Small collector capacity. • Ultrasmall-sized package permitting the 2SC4453- applied sets to be made small and slim. Package Dimensions unit : mm 2018B [2SC4453] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Bas.

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Ordering number : ENN2812A 2SC4453 NPN Epitaxial Planar Silicon Transistor 2SC4453 High-Speed Switching Applications Features • Fast switching speed. • Low collector saturation voltage. • High gain-bandwidth product. • Small collector capacity. • Ultrasmall-sized package permitting the 2SC4453- applied sets to be made small and slim. Package Dimensions unit : mm 2018B [2SC4453] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Marking : ST * : The 2SC4453 is classified by 5mA hFE as follows : Rank 2 3 4 hFE 50 to 100 70 to 140 100 to 200 Conditions VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=10mA 1 0.95 0.95 2 1.9 2.9 0.8 1.1 0.5 1 : Base 2 : Emitter 3 : Collector SANYO : CP Ratings 40 40 15 5 200 500 40 200 150 --55 to +150 Unit V V V V mA mA mA mW °C °C min 50* Ratings typ max Unit 0.1 µA 0.1 µA 90 200* Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2001 TS IM / D2598 HA (KT) / O278 MO, TS No.2812-1/4 2SC4453 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn ON Time Storage Time Fall Time ton, toff Test Circuit Symbol Conditions fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCE=10V, IC=10mA VCB=5V, f=1MHz IC=10mA, IB=1mA IC=10mA, IB=1mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. tstg Test Circuit min 450 40 15 5 Ratings typ 750 1.4 0.13 0.80 8.0 6.0 12 ma.


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