UTC2SD468

UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Ic(peak) PC Tj TSTG VALUE 25 20 5 1 1.5 0.9 150 -55 ~ +150 UNIT V V V A A W °C °C www.DataSheet.co.kr ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector Cut-Off Current DC Current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: Pulse test SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE fT Cob TEST CONDITIONS Ic=10µA, IE=0 Ic=1mA, RBE=∞ IE=10µA, IC=0 VCB=20V, IE=0 VCE=2V, Ic=0.5A (note) Ic=0.8A, IB=0.08A (note) VCE=2V, Ic=0.5A (note) VCE=2V, Ic=0.5A (note) VCB=10V, IE=0, f=1MHz MIN 25 20 5 85 TYP MAX UNIT V V V µA V V MHz pF 0.2 0.79 190 22 1 240 0.5 1 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-050,A Datasheet pdf - http://www.DataSheet4U.net/ UTC 2SD468 RANK RANGE NPN EPITAXIAL SILICON TRANSISTOR B 85 - 170 C 120 - 240 CLASSIFICATION OF hFE TYPICAL PERFORMANCE CHARAC...