2SC4445
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : ...
2SC4445
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage and High Speed Switchihg
Transistor) Application : Switching
Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
900
V
VCEO
800
V
VEBO
7
V
IC
3(Pulse6)
A
IB
1.5
A
PC
60(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol
Conditions
ICBO IEBO
VCB=800V VEB=7V
V(BR)CEO hFE VCE(sat)
IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A
VBE(sat) fT
IC=0.7A, IB=0.14A VCE=12V, IE=–0.3A
COB
VCB=10V, f=1MHz
(Ta=25°C)
Ratings 100max 100max 800min 10 to 30 0.5max 1.2max
15typ 50typ
Unit µA µA V
V V MHz pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
250
357
0.7
10
–5
0.1
IB2 (A)
–0.35
ton (µs)
0.7max
tstg (µs)
4max
tf (µs)
0.7max
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2 3.45 ±0.2
0.8±0.2 5.5
23.0±0.3 9.5±0.2
16.2
ø3.3±0.2 a b
3.0
1.6 3.3
5.45±0.1
1.75
2.15
1.05
+0.2 -0.1
5.45±0.1
0.65
+0.2 -0.1
0.8 3.35
1.5 4.4 1.5
Weight : Approx 6.5g a. Part No. B C E b. Lot No.
Collector Current IC(A)
I C– V CE Characteristics (Typical)
3 IB=700mA 500mA
300mA 2
200mA
100mA 1
50mA
0
0
1
2
3
4
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V) Base-Emitter Saturation Voltage VBE(sat)(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
VCE(sat) 2
–55˚C (Case Temp) 25˚C (Case Temp...
