2SC4435

Ordering number:EN3791 NPN Triple Diffused Planar Silicon Transistor 2SC4435 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · Fast switching speed (tf=300ns max). · High brocking voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4435] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 1.6 2.0 1.0 12 0.6 3 1.4 5.45 5.45 Conditions 20.0 1.4 0.6 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Ratings 1500 800 7 5 16 2.5 100 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) VCB=800V, IE=0 VCE=1500V IC=100mA, IB=0 VEB=4V, IC=0 IC=4A, IB=1A IC=4A, IB=1A Ratings min typ 800 max 10 1.0 1.0 5 1.5 Unit µA mA V mA V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as...