2SC4430

Ordering number:EN2853 NPN Triple Diffused Planar Silicon Transistor 2SC4430 800V/12A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039D [2SC4430] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tc=25˚C PW≤300µs, duty cycle≤10% 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Conditions Ratings 1100 800 7 12 30 6 3 65 150 –55 to +150 2.0 Unit V V V A A A W W ˚C ˚C Tj Tstg Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1* hFE2 VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.8A VCE=5V, IC=4A 10 8 Conditions Ratings min typ max 10 10 40 Unit µA µA * : The hFE1 of the 2SC4430 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. 10 K 20 15 L 30 20 M 40 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, s...