Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA968 2SA968A 2SA968B
DESCRIPTION ·With ...
Inchange Semiconductor
Product Specification
Silicon
PNP Power
Transistors
2SA968 2SA968A 2SA968B
DESCRIPTION ·With TO-220 package ·Complement to type 2SC2238 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER 2SA968 VCBO Collector-base voltage 2SA968A 2SA968B 2SA968 VCEO Collector-emitter voltage 2SA968A 2SA968B VEBO IC IE PT Tj Tstg Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter
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CONDITIONS
VALUE -160 -180 -200 -160 -180 -200 -5 -1.5 1.5 25 150 -55~150
UNIT
V
V
V A A W ℃ ℃
Datasheet pdf - http://www.DataSheet4U.net/
Inchange Semiconductor
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA968 V(BR)CEO Collector-emitter breakdown voltage 2SA968A 2SA968B V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency IE=-1mA; IC=0 IC=-10mA; IB=0
2SA968 2SA968A 2SA968B
CONDITIONS
MIN -160 -180 -200 -5
TYP.
MAX
UNIT
V
V -1.5 -1.0 -1.0 -1.0 V V μA μA
IC=-0....
