2SC4408

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4408 Power Amplifier Applications Power Switching Applications 2SC4408 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 500 ns (typ.) Complementary to 2SA1680 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 80 50 6 2 0.2 900 150 −55 to 150 V V V A A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.36 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Electrical Characteristics (Ta = 25°C) 2SC4408 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage ...