DatasheetsPDF.com

2SC4399 Dataheets PDF



Part Number 2SC4399
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Epitaxial Planar Silicon Transistor
Datasheet 2SC4399 Datasheet2SC4399 Datasheet (PDF)

Ordering number:ENN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Features · High power gain : PG=25dB typ (f=100MHz). · Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4399] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage .

  2SC4399   2SC4399


Document
Ordering number:ENN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Features · High power gain : PG=25dB typ (f=100MHz). · Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4399] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse transfer Capacitance Base-to-Collector Time Constant Power Gain Noise Figure ICBO IEBO hFE fT Cre rbb'Cc PG NF VCB=10V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, f=1MHz VCB=6V, IC=1mA, f=31.9MHz VCB=6V, IC=1mA, f=100MHz VCB=6V, IC=1mA, f=100MHz * : The 2SC4399 is classified by 1mA hFE as follows : Marking : F hFE rank : 3, 4, 5 Rank hFE 3 60 to 120 4 90 to 180 5 135 to 270 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Ratings 30 20 5 30 150 150 –55 to +150 Unit V V V mA mW ˚C ˚C Ratings min typ 60* 200 320 0.9 12 25 3.0 max 0.1 0.1 270* 1.2 20 Unit µA µA MHz pF ps dB dB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83004TN (PC)/D2598HA (KT)/2229MO, TS No.3020–1/5 2SC4399 NF, PG Test Circuit to 5pF INPUT 50Ω to 30pF L1 to 22pF to 22pF to 30pF L2 OUTPUT 50Ω Collector Current, IC – mA DC Current Gain, hFE VBE VCE L1 : 1mmø plated wire 10mmø 4 T, tap : 2T from VBE side. L2 : 1mmø plated wire 10mmø 7 T, tap : 1T from VCE side. L3 : 1mmø enameled wire 10mmø 3 T IC -- VCE 5 30µA 4 25µA 20µA 3 15µA 2 10µA 1 0 0 1000 7 5 3 2 5µA IB=0 2 4 6 8 10 Collector-to-Emitter Voltage, VCE – V ITR06678 hFE -- IC VCE=6V 100 7 5 3 2 10 0.1 5 23 5 7 1.0 2 3 5 7 10 Collector Current, IC – mA Cre -- VCB 23 5 ITR06680 f=1MHz 3 2 1.0 7 5 3 2 1.0 23 5 7 10 23 5 Collector-to-Base Voltage, VCB -- V ITR06682 Base-to-Collector Time Constant,rbb 'Cc – ps Gain-Bandwidth Product, fT – GHz Base Current, IB – µA IB -- VBE 100 VCE=6V 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE – V ITR06679 fT -- IC 2 1000 7 5 3 2 VCE =12V 6V 3V 100 7 5 23 100 7 5 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC – mA rbb'Cc -- IC 5 7 100 ITR06681 f=31.9MHz 3 2 10 7 5 3 2 0.1 VCE=3V 6V 12V 2 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC – mA ITR06683 No.3020–2/5 Reverse Transfer Capacitance, Cre – pF Collector-to-Emitter Saturation Voltage, VCE(sat) – V Collector Dissipation, PC – W 2SC4399 VCE(sat) -- IC 1.0 IC / IB=10 7 5 3 2 0.1 7 5 160 140 120 100 80 60 40 3 2 1.0 23 5 7 10 23 5 7 100 Collector Current, IC – mA ITR06684 Input Admittance, yie -- IC 5 VCE=6V 3 f=1.0MHz g ie 5 3 22 0.1 100 7 c ie 7 55 20 0 0 10 7 5 3 cie -- pF goe -- mS, coe -- pF 3 32 22 PC -- Ta 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C ITR06685 Output Admittance, yoe -- IC VCE=6V f=1.0MHz g oe c oe gie -- mS gie -- mS 0.01 10 3 5 7 1.0 23 5 7 10 Collector Current, IC – mA ITR06686 Input Admittance, yie -- IC 2 VCE=6V 2 f=10MHz 1.0 100 77 55 3 c ie 3 22 0.1 10 77 55 33 3 5 7 1.0 23 5 7 10 Collector Current, IC – mA ITR06688 Input Admittance, yie -- VCE 2 IC=1mA f=100MHz cie 10 7 5 3 2 gie gie cie -- pF goe -- mS, coe -- pF gre -- µS 1.0 3 5 7 1.0 23 5 7 10 Collector Current, IC – mA ITR06687 Output Admittance, yoe -- IC 5 VCE=6V f=10MHz 3 2 g oe 10 7 5 3 c oe 2 1.0 3 5 7 1.0 23 5 7 10 Collector Current, IC – mA ITR06689 Reverse Transfer Admittance, yre -- VCE 55 IC=1mA 3 f=100MHz 3 22 100 cre 1.0 7 gre 7 55 33 22 cre -- pF gie -- mS, cie -- pF 1.0 1.0 23 5 7 10 2 Collector-to-Emitter Voltage, VCE – V ITR06690 10 0.1 7 1.0 23 5 7 10 2 Collector-to-Emitter Voltage, VCE – V ITR06691 No.3020–3/5 2SC4399 Foward Transfer .


2SC4394 2SC4399 2SC4400


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)