Document
Ordering number:ENN3020
NPN Epitaxial Planar Silicon Transistor
2SC4399
High-Frequency General-Purpose Amplifier Applications
Features
· High power gain : PG=25dB typ (f=100MHz). · Ultrasmall-sized package permitting the 2SC4399-
applied sets to be made small and slim.
0.425
Package Dimensions
unit:mm 2059B
[2SC4399]
0.3
3
0.15
0.2
0 to 0.1
2.1 1.250
0.425
12 0.65 0.65
2.0
0.3 0.6 0.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse transfer Capacitance Base-to-Collector Time Constant Power Gain Noise Figure
ICBO IEBO hFE
fT Cre rbb'Cc PG
NF
VCB=10V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, f=1MHz VCB=6V, IC=1mA, f=31.9MHz VCB=6V, IC=1mA, f=100MHz VCB=6V, IC=1mA, f=100MHz
* : The 2SC4399 is classified by 1mA hFE as follows : Marking : F
hFE rank : 3, 4, 5
Rank hFE
3 60 to 120
4 90 to 180
5 135 to 270
1 : Base 2 : Emitter 3 : Collector SANYO : MCP
Ratings 30 20 5 30
150 150 –55 to +150
Unit V V V mA
mW ˚C ˚C
Ratings min typ
60* 200 320
0.9 12 25 3.0
max 0.1 0.1
270*
1.2 20
Unit
µA µA
MHz pF ps dB dB
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83004TN (PC)/D2598HA (KT)/2229MO, TS No.3020–1/5
2SC4399
NF, PG Test Circuit
to 5pF
INPUT 50Ω to 30pF L1 to 22pF
to 22pF to 30pF
L2
OUTPUT 50Ω
Collector Current, IC – mA
DC Current Gain, hFE
VBE
VCE
L1 : 1mmø plated wire 10mmø 4 T, tap : 2T from VBE side. L2 : 1mmø plated wire 10mmø 7 T, tap : 1T from VCE side. L3 : 1mmø enameled wire 10mmø 3 T
IC -- VCE
5
30µA
4 25µA
20µA
3
15µA
2
10µA
1
0 0
1000 7 5 3 2
5µA
IB=0
2 4 6 8 10
Collector-to-Emitter Voltage, VCE – V ITR06678
hFE -- IC
VCE=6V
100 7 5
3 2
10 0.1
5
23
5 7 1.0 2 3 5 7 10
Collector Current, IC – mA
Cre -- VCB
23 5 ITR06680
f=1MHz
3
2
1.0 7 5
3 2 1.0
23
5 7 10
23
5
Collector-to-Base Voltage, VCB -- V ITR06682
Base-to-Collector Time Constant,rbb 'Cc – ps
Gain-Bandwidth Product, fT – GHz
Base Current, IB – µA
IB -- VBE
100
VCE=6V
80
60
40
20
0 0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V ITR06679
fT -- IC
2
1000 7 5
3 2
VCE =12V 6V 3V
100
7 5
23
100 7 5
5 7 1.0 2 3 5 7 10 2 3
Collector Current, IC – mA
rbb'Cc -- IC
5 7 100 ITR06681
f=31.9MHz
3 2
10 7 5
3 2 0.1
VCE=3V
6V 12V
2 3 5 7 1.0
2 3 5 7 10
2
Collector Current, IC – mA
ITR06683
No.3020–2/5
Reverse Transfer Capacitance, Cre – pF
Collector-to-Emitter Saturation Voltage, VCE(sat) – V
Collector Dissipation, PC – W
2SC4399
VCE(sat) -- IC
1.0
IC / IB=10
7 5
3 2
0.1 7 5
160 140 120 100
80 60 40
3
2
1.0
23
5 7 10
23
5 7 100
Collector Current, IC – mA
ITR06684
Input Admittance, yie -- IC
5
VCE=6V 3 f=1.0MHz
g ie
5 3
22
0.1 100
7 c ie 7
55
20 0 0
10 7 5
3
cie -- pF goe -- mS, coe -- pF
3 32 22
PC -- Ta
20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C ITR06685
Output Admittance, yoe -- IC
VCE=6V f=1.0MHz g oe c oe
gie -- mS
gie -- mS
0.01
10
3 5 7 1.0
23
5 7 10
Collector Current, IC – mA
ITR06686
Input Admittance, yie -- IC
2
VCE=6V
2
f=10MHz
1.0 100
77
55
3 c ie 3
22
0.1 10 77 55
33
3 5 7 1.0
23
5 7 10
Collector Current, IC – mA
ITR06688
Input Admittance, yie -- VCE
2
IC=1mA
f=100MHz cie
10
7
5
3
2 gie
gie cie -- pF goe -- mS, coe -- pF
gre -- µS
1.0
3 5 7 1.0
23
5 7 10
Collector Current, IC – mA
ITR06687
Output Admittance, yoe -- IC
5
VCE=6V
f=10MHz
3
2
g oe
10
7 5
3
c oe
2
1.0
3 5 7 1.0
23
5 7 10
Collector Current, IC – mA
ITR06689
Reverse Transfer Admittance, yre -- VCE
55
IC=1mA
3 f=100MHz 3
22
100 cre 1.0 7 gre 7
55
33 22
cre -- pF
gie -- mS, cie -- pF
1.0 1.0
23
5 7 10
2
Collector-to-Emitter Voltage, VCE – V ITR06690
10 0.1
7 1.0
23
5 7 10
2
Collector-to-Emitter Voltage, VCE – V ITR06691
No.3020–3/5
2SC4399
Foward Transfer .