2SC4381/4382
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) Application : TV Vertical ...
2SC4381/4382
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SA1667/1668) Application : TV Vertical Output, Audio Output Driver and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Ratings
Symbol
Unit
2SC4381 2SC4382
VCBO
150 200
V
VCEO
150 200
V
sElectrical Characteristics
Symbol
Conditions
ICBO
VCB=
(Ta=25°C)
Ratings 2SC4381 2SC4382 Unit
10max
µA
150 200
V
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2 2.8 c0.5
4.0±0.2
16.9±0.3 8.4±0.2
VEBO
6
V
IEBO
VEB=6V
10max
µA
IC
2
A
V(BR)CEO
IC=25mA
150min 200min V
IB
1
A
hFE
VCE=10V, IC=0.7A
60min
ø3.3±0.2 a b
3.9 ±0.2 0.8±0.2
PC
25(Tc=25°C)
W
VCE(sat) IC=0.7A, IB=0.07A
1.0max
V
13.0min
Tj
150
°C
fT
VCE=12V, IE=–0.2A
Tstg
–55 to +150
°C
COB
VCB=10V, f=1MHz
15typ 35typ
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(mA)
20
20
1
10
–5
100
IB2 (mA)
–100
ton (µs)
1.0typ
tstg (µs)
3.0typ
MHz pF
tf (µs) 1.5typ
1.35±0.15
1.35±0.15
2.54
0.85
+0.2 -0.1
2.54
0.45
+0.2 -0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Part No. b. Lot No.
DC Current Gain hFE
Collector Current IC(A) 50mA
I C– V CE Characteristics (Typical)
2
1.6
1.2 IB=5mA/Step
0.8
0.4
0
0
2
4
6
8
10
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=10V) 2
Co...