2SC4366

2SC4366 Silicon NPN Epitaxial Application Low Frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4366 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 60 50 15 300 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Base to emitter voltage DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VBE hFE1 hFE2 Collector to emitter saturation voltage Note: Marking is “ZI–”. VCE(sat) Min 60 50 15 — — 800 500 — Typ — — — — — — — — Max — — — 1 0.75 2000 — 0.3 V Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 6 V, IC = 1 mA VCE = 6 V, IC = 100 mA (pulse) VCE = 6 V, IC = 1 mA I C = 300 mA, IB = 30 mA (pulse) 2 2SC4366 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Cuttent IC (mA) Typical Output Characteristics 50 40 35 30 25 20 40 100 30 20 15 50 10 10 5 µA IB = 0 Ta = 25°C 0 50 100 150 Ambient Temperature Ta (°C) 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) ...