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SCS112AG
SiC Schottky Barrier Diodes
Description
SiC
Schottky
Barrier Diode SCS112AG Applications Switching power supply Dimensions (Unit : mm) Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : TO-220AC Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Revers...
Rohm
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SCS112AG
SiC Schottky Barrier Diodes
- Rohm
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