SCS110AG

SiC Schottky Barrier Diode SCS110AG Applications Switching power supply Dimensions (Unit : mm) Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : ＴO-220AC Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current (*1) Forward current surge peak (60Hz ・1cyc) (*2) Junction temperature Storage temperature (*1)Tc=117°C max (*2)PW=8.3ms sinusoidal www.DataSheet.co.kr Symbol VRM VR IF IFSM Tj Tstg Limits 600 600 10 40 150 55 to 150 Unit V V A A °C °C Electrical characteristics (Ta=25°C) Parameter DC blocking voltage Forward voltage Reverse current Total capacitance Total capacitive charge Switching time Thermal resistance Symbol VDC VF IR C Qc tc Rth(j-c) Min. 600 - Typ. 1.5 2.0 430 47 16 15 - Max. 1.7 200 1.8 Unit V V μA pF pF nC ns °C/W IR=0.2mA IF=10A VR=600V Conditions VR=1V,f=1MHz VR=600V,f=1MHz VR=400V,di/dt=350A/μs VR=400V,di/dt=350A/μs junction to case www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ SCS110AG 　 Data Sheet Fig.1 VF-IF Characteristics 100 pulsed 10 FORWARD CURRENT: IF(A) Ta= 125°C 1 Ta= 75°C Ta= 25°C Ta=-25°C 0.1 FORWARD CURRENT: IF(A) 10 15 pulsed Fig.2 VF-IF Characteristics Ta= 125°C Ta= 75°C 5 Ta= 25°C Ta=-25°C 0.01 0.001 0 0.5 1 1.5 2 2.5 FORWARD VOLTAGE : VF (V) 0 0 0.5 1 ...