AMD534C

Analog Power P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology S1 G1 D S2 G2 AMD534C PRODUCT SUMMARY V ) rDS(on) m (Ω ) D S (V 30 -30 39 @ VGS = 4.5V 29 @ VGS = 10V 29 @ VGS = -4.5V 22 @ VGS = -10V D1 ID (A) 30 36 -36 39 S 2 G 1 G 2 S 1 D2 P-Channel MOSFET N-Channel MO SF ET ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Param eter Sym bol N-Channel P-Channel Units VDS Drain-Source Voltage 30 -30 V ±20 ±20 G ate-Source Voltage VGS www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current Power Dissipation a b a TA=25 C TA=70 C o o ID IDM 36 30 40 30 50 -39 -32 -40 -30 50 A W o A Continuous Source Current (Diode Conduction) a o IS TJ, Tstg TA=25 C PD Operating Junction and Storage Tem perature Range -55 to 175 C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Case a Maximum 50 3.0 Units o o RθJA RθJC C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width lim...