MOSFET
Analog Power P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Description
Analog Power P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8PP saves board space Fast switching speed High performance trench technology
AM7433P
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 9 @ VGS = -10V -30 13 @ VGS = -4.5V
SOIC-8PP Top View S S S G 1 2 3 4 8 7 6 5 D D D D
ID (A) -20 -17
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS Drain-Source Voltage -30 V ±20 Gate-Source Voltage VGS
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o
Continuous Drain Current Pulsed Drain Current
b
a
TA=25 C TA=70 C
o
o
ID IDM
-20 -16 ±50 -2.1 5.0 3.2 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
a
IS TA=25 C TA=70 C
o o
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
C
T H ERMA L RE SIST A NC E RA T ING S P aram eter
M axim umJunction-to-Am bient
a
Sym bol
RθJA
t <= 10 sec Steady State
Maxim um U nits o 25 C/W
65
o
C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1 PRELIMINARY
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