AM7420N

Analog Power N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8PP saves board space Fast switching speed High performance trench technology AM7420N PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 2.5 @ VGS = 10V 20 4 @ VGS = 4.5V SOIC-8PP Top View S S S G 1 2 3 4 8 7 6 5 D D D D ID (A) 37 29 D1 G1 S1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage VDS 20 V ±8 Gate-Source Voltage VGS www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM ±37 ±30 ±50 2.3 5.0 3.2 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C T H ERMA L RE SIST A NC E RA T ING S P aram eter M axim umJunction-to-Am bient a Sym bol RθJA t <= 10 sec Steady State Maxim um U nits o 25 C/W 65 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order N...