AM6922NH

Analog Power Dual N-Channel Logical Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSSOP-8 saves board space Fast switching speed High performance trench technology AM6922NH PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.018 @ VGS = 4.5 V 20 0.024 @ VGS = 2.5V 0.034 @ VGS = 1.8V TSSOP-8 Top View D S1 S1 G1 1 2 3 4 8 7 6 5 D S2 S2 G2 G1 S1 N-Channel MOSFET D ID (A) 6.7 5.8 4.9 D G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM 6.7 5.5 ±30 1.5 1.2 0.8 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RthJA Typ 72 100 Max 83 120 o t <= 10 sec Steady State C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum j...