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AM5430N Dataheets PDF



Part Number AM5430N
Manufacturers Analog Power
Logo Analog Power
Description MOSFET
Datasheet AM5430N DatasheetAM5430N Datasheet (PDF)

Analog Power AM5430N N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • Small Footprint DFN3x2-8L package Typical Applications: • Portable Computing Power Conversion • Portable Entertainment and GPS Power Conversion PRODUCT SUMMARY rDS(on) (mΩ) 22 @ VGS = 10V 30 @ VGS = 4.5V VDS (V) 30 ID(A) 10 8.5 DFN3x2-8L EP D D D D G S S S ABSOLUTE MAXIMUM RATINGS (T A = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS .

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Analog Power AM5430N N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • Small Footprint DFN3x2-8L package Typical Applications: • Portable Computing Power Conversion • Portable Entertainment and GPS Power Conversion PRODUCT SUMMARY rDS(on) (mΩ) 22 @ VGS = 10V 30 @ VGS = 4.5V VDS (V) 30 ID(A) 10 8.5 DFN3x2-8L EP D D D D G S S S ABSOLUTE MAXIMUM RATINGS (T A = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 TA=25°C 10 ID Continuous Drain Current a TA=70°C 7.5 IDM Pulsed Drain Current b 30 a I 4.4 Continuous Source Current (Diode Conduction) S T =25°C 3.5 A PD Power Dissipation a TA=70°C 2 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range www.DataSheet.co.kr Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 35 RθJA 81 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM5430N Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM5430N Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 6 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 6 A IS = 2.2 A, VGS = 0 V Dynamic VDS = 15 V, VGS = 4.5 V, ID = 6 A Min 1 Typ 1.5 Max 3 ±100 1 25 22 30 Unit V nA uA A mΩ S V 10 10 0.76 3.06 1.31 0.87 2.5 3.7 9.4 3.9 nC VDD = 15 V, RL = 2.5 Ω , ID = 6 A, VGEN = 10 V, RGEN = 6 Ω nS www.DataSheet.co.kr Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL p.


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