AM4929P

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology AM4929P PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 52 @ VGS = -4.5V -20 89 @ VGS = -2.5V 124 @ Vgs = -1.8V 1 2 3 4 ID (A) -4.9 -4.0 -3.6 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a T A=25 C T A=70 C o o ID IDM -5.2 -4.1 ±50 -2.1 2.1 1.3 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS T A=25 C T A=70 C o o PD Operating Junction and Storage Temperature Range T J, T stg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Case a Maximum Junction-to-Ambient a Symbol RθJC RθJA Maximum 40 60 Units o o t <= 5 sec t <= 5 sec C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number:...