MOSFET
Analog Power P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Description
Analog Power P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology
AM4929P
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 52 @ VGS = -4.5V -20 89 @ VGS = -2.5V 124 @ Vgs = -1.8V
1 2 3 4
ID (A) -4.9 -4.0 -3.6
8 7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12
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o
Continuous Drain Current Pulsed Drain Current
b
a
T A=25 C T A=70 C
o
o
ID IDM
-5.2 -4.1 ±50 -2.1 2.1 1.3 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
a
IS T A=25 C T A=70 C
o o
PD
Operating Junction and Storage Temperature Range
T J, T stg -55 to 150
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Case a Maximum Junction-to-Ambient
a
Symbol
RθJC RθJA
Maximum
40 60
Units
o o
t <= 5 sec t <= 5 sec
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1 PRELIMINARY
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