AM4533C

Analog Power P & N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology AM4533C PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 20 -20 40 @ VGS = 2.5V 31 @ VGS = 4.5V 80 @ VGS = -2.5V 52 @ VGS = -4.5V ID (A) 6.0 6.9 -4.2 -5.2 1 2 3 4 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±8 ±8 www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM 6.9 5.4 20 1.3 2.1 1.3 -5.2 -6.8 -20 -1.3 2.1 1.3 o A A W C Continuous Source Current (Diode Conduction) Power Dissipation a a o o IS PD TJ, Tstg TA=25 C TA=70 C Operating Junction and Storage Temperature Range -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RθJA Maximum 62.5 110 Units o o t <= 10 sec Steady-State C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PREL...