MOSFET
Analog Power P & N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench pr...
Description
Analog Power P & N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology
AM4533C
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 20 -20 40 @ VGS = 2.5V 31 @ VGS = 4.5V 80 @ VGS = -2.5V 52 @ VGS = -4.5V
ID (A) 6.0 6.9 -4.2 -5.2
1 2 3 4
8 7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±8 ±8
www.DataSheet.co.kr
o
Continuous Drain Current Pulsed Drain Current
b
a
TA=25 C TA=70 C
o
o
ID IDM
6.9 5.4 20 1.3 2.1 1.3
-5.2 -6.8 -20 -1.3 2.1 1.3
o
A A W C
Continuous Source Current (Diode Conduction) Power Dissipation
a
a o o
IS PD TJ, Tstg
TA=25 C TA=70 C
Operating Junction and Storage Temperature Range
-55 to 150
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambient
a
Symbol
RθJA
Maximum
62.5 110
Units
o o
t <= 10 sec Steady-State
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1 PREL...
Similar Datasheet