AM40N10-30D

Analog Power AM40N10-30D N-Channel 100-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters PRODUCT SUMMARY rDS(on) (mΩ) 36 @ VGS = 10V 42 @ VGS = 4.5V VDS (V) 100 ID(A) 26 24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 TC=25°C ID Continuous Drain Current 26 IDM Pulsed Drain Current b 50 IS Continuous Source Current (Diode Conduction) 50 T =25°C P Power Dissipation 50 C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range www.DataSheet.co.kr Units V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 50 RθJC 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM40N10-30D Datasheet pdf - http://www.DataSheet4U.net/ Analog Power Typical Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance R...