AM3445P

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology o AM3445P PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.038 @ VGS = -4.5V -20 0.054 @ VGS = -2.5V 0.072 @ VGS = -1.8V 1 2 3 ID (A) -5.6 -4.8 -4.0 6 5 4 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS Drain-Source Voltage -20 V ±8 Gate-Source Voltage VGS www.DataSheet.co.kr Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM -5.6 -4.5 ±20 -1.7 2.0 1.3 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RT HJA Maximum Units 62.5 o t <= 5 sec C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM3445_B Datasheet pdf - http://www.DataSheet4U....