AM2305P

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology AM2305P PRO DU C T SU MMA RY V ) rDS(on) (O H M) DS (V 0.043 @ V G S = -4.5V -20 0.054 @ V G S = -2.5V 0.120 @ V G S = -1.8V ID (A ) -4.5 -4.0 -2.7 G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Symbol Ratings Parameter Drain-Source Voltage VDS -20 Gate-Source Voltage ±8 VGS www.DataSheet.co.kr Units V Continuous Drain Currenta Pulsed Drain Current Power Dissipationa Operating Junction and Storage Temperature Range b TA=25oC TA=70 C TA=25 C TA=70 C o o o ID IDM PD TJ, Tstg -4.5 -3.6 -10 1.25 0.8 -55 to 150 o A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol t <= 5 sec Steady-State RTHJA Maximum 100 150 Units o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2305P_A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM2305P SPECIFICATION...