P-Channel 30-V (D-S) MOSFET
Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Description
Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SC70-3 saves board space Fast switching speed High performance trench technology
AM1331P
P RO DU C TSU MMA RY V ) rDS(on) (O H M) DS (V 0.112 @ V G S = -10V -30 0.172 @ V G S = -4.5V
ID (A ) -1.5 -1.2
G D S
A BSOLUTE MA XIMUM RA TINGS (TA = 25 oC UNLESS OTHERW ISE NOTED) Param eter Sym bol Maxim um Units VDS Drain-Source Voltage -30 V ±20 G ate-Source Voltage VGS
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Continuous Drain Current Pulsed Drain Current
b
a
TA=25 C TA=70 C
o
o
ID IDM
-1.5 -1.2 -2.5 ±0.28 0.34 0.22 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
a
IS TA=25 C TA=70 C
o o
PD
Operating Junction and Storage Tem perature Range
TJ, Tstg -55 to 150
C
THERM A L RESISTA NCE RA TING S
Param eter M axim umJunction-to-Am bient
a
Sym bol t <= 5 sec Steady-State RTHJA
Maxim um 375 430
Units
o
C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM1331_B
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