FLL21E040IK

FLL21E040IK FEATURES High Voltage - High Power GaAs FET ・High Voltage Operation : VDS=28V ・High Gain: 15dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is target for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA base station amplifiers while offering high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Condition Rating Unit V V W oC oC VDS 32 -3 VGS　　　 Tc=25oC　　　　 Pt 83.3 Tstg -65 to +175 200 Tch RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR Tch Condition RG=2 Ω RG=2 Ω www.DataSheet.co.kr Limit <28 <176 >-15.9 155 Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Gate-Source Breakdown Voltage 3rd Order Intermodulation Distortion Power Gain Drain Efficiency Adjacent Channel Leakage Power Ratio Thermal Resistance Vp VGSO IM3 Gp ηd ACLR Rth VDS=5V IDS=150mA IGS=-1.5mA VDS=28V IDS(DC)=500mA Pout=40dBm(Avg.) note Channel to Case -0.1 -5 14.0 - Limit...