2SC4265

2SC4265 Silicon NPN Epitaxial Application VHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4265 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Note: Marking is “JC”. Symbol V(BR)CBO V(BR)CEO I CBO I EBO VCE(sat) hFE Cob fT Min 30 20 — — — 40 — 600 Typ — — — — — — — — Max — — 0.5 10 1.0 — 1.5 — pF MHz Unit V V µA µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VCE = 15 V, IE = 0 VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 10 mA See characteristic curves of 2SC2735. 2 2SC4265 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 120 100 80 60 40 20 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 0.425 2.0 ± 0.2 0.1 0.3 + – 0.05 0.1 0.16 + – 0.06 1.25 ± 0.1 2.1 ± 0.3 0 – 0.1 0.2 0.9 ± 0.1 0.65 0.65 1.3 ± 0.2 0.425 0.1 0.3 + – 0.05 0.1 0.3 + – 0.05 Hitachi Code JEDEC EIAJ ...