SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast swit...
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES
VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC trr(typ) = 150ns
D
KF5N50PR/FR/PS/FS
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
KF5N50PR, KF5N50PS
A
O C F
E
G B Q
I K P M L J N N H
@VGS = 10V
MAXIMUM RATING (Tc=25
)
RATING
DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q
CHARACTERISTIC
SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg
KF5N50PR KF5N50PS 500
KF5N50FR KF5N50FS
UNIT
1
2
3
1. GATE 2. DRAIN 3. SOURCE
Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25
V V 5.0* 2.9* 13*
A S E
G B F
30 5.0 2.9 13 270
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TO-220AB
A
KF5N50FR, KF5N50FS
C
mJ mJ V/ns 41.5 0.33 W W/
P
8.6 20 83 0.66 150 -55 150
DIM
MILLIMETERS
K
L
L
R
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resista...