KF5N50FR

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC trr(typ) = 150ns D KF5N50PR/FR/PS/FS N CHANNEL MOS FIELD EFFECT TRANSISTOR KF5N50PR, KF5N50PS A O C F E G B Q I K P M L J N N H @VGS = 10V MAXIMUM RATING (Tc=25 ) RATING DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q CHARACTERISTIC SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg KF5N50PR KF5N50PS 500 KF5N50FR KF5N50FS UNIT 1 2 3 1. GATE 2. DRAIN 3. SOURCE Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 V V 5.0* 2.9* 13* A S E G B F 30 5.0 2.9 13 270 www.DataSheet.co.kr TO-220AB A KF5N50FR, KF5N50FS C mJ mJ V/ns 41.5 0.33 W W/ P 8.6 20 83 0.66 150 -55 150 DIM MILLIMETERS K L L R Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resista...