SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast swit...
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES
VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC
D N
KF5N50P/F/PZ/FZ
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
KF5N50P, KF5N50PZ
A
O C F
E
G B Q
I K P M L J H
@VGS = 10V
N
MAXIMUM RATING (Tc=25
CHARACTERISTIC
)
RATING SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 83 0.66 150 -55 150
N N H
DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q
KF5N50P KF5N50PZ 500
KF5N50F KF5N50FZ
UNIT
1
2
3
1. GATE 2. DRAIN 3. SOURCE
Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25
V V 5.0* 2.9* 13*
A S E
G B F
30 5.0 2.9 13 270
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TO-220AB
A
KF5N50F, KF5N50FZ
C
mJ mJ V/ns 41.5 0.33 W
P
8.6 4.5
DIM
MILLIMETERS
K
L
L
W/
R
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Ju...