KF5N50DR

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 4.3A Drain-Source ON Resistance : RDS(ON)=1.4 (Max) @VGS = 10V Qg(typ) = 12nC trr(typ) = 150ns H G F F KF5N50DR/DS N CHANNEL MOS FIELD EFFECT TRANSISTOR A C K D L B J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 500 30 4.3 2.7 13 270 8.6 www.DataSheet.co.kr 1 2 3 UNIT V V 1. GATE 2. DRAIN 3. SOURCE A DPAK (1) mJ mJ V/ns W W/ 20 59.5 0.48 150 -55 150 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 2.1 110 /W /W PIN CONNECTION (KF5N50DR) D (KF5N50DS) D G G S S 2008. 12. 3 Revision No : 0 1/6 Datashee...