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2SC4244

Toshiba Semiconductor

Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4244 2SC4244 UHF TV Tuner RF Amplifier Applications Unit: mm ...


Toshiba Semiconductor

2SC4244

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Description
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4244 2SC4244 UHF TV Tuner RF Amplifier Applications Unit: mm · Low noise figure: NF = 4dB (typ.) · High power gain: Gpb = 17dB (typ.) · Excellent forward AGC characteristics Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 25 20 2 4 20 100 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Transition frequency Reverse transfer capacitance Power gain Noise figure AGC voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE fT Crb Gpe NF VAGC VCB = 10 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 VCE = 3 V, IC = 1 mA VCE = 3 V, IC = 1 mA VCE = 2 V, IB = 0, f = 1 MHz VCC = 4.5 V, VAGC = 2.0 V f = 800 MHz (Figure 1) VCC = 4.5 V, G.R. = -20dB, f = 800 MHz Min ¾ ¾ 20 40 500 ¾ 12 ¾ (Note) 2.5 Typ. ¾ ¾ ¾ 100 850 0.4 17 4 3.2 Max 0.1 1 ¾ ¾ ¾ 0.55 ¾ 6 4.0 Unit mA mA V MHz pF dB dB V 1 2003-03-27 2SC4244 L1, L2: f1.0 mm silver plated copper wire Note: VAGC measured by the test circuit shown in Figure 1, when the power gain is reduced to 20dB compared with Gpb shown above table. Figure 1 800 MHz ...




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