DatasheetsPDF.com

CSD-8M

Central Semiconductor

SCR

CSD-8M CSD-8N 8.0 AMP SCR 600 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR C...


Central Semiconductor

CSD-8M

File Download Download CSD-8M Datasheet


Description
CSD-8M CSD-8N 8.0 AMP SCR 600 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-8M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Forward Gate Current (tp=10µs) Peak Forward Gate Voltage (tp=10µs) Peak Reverse Gate Voltage (tp=10µs) Critical Rate of Rise of On-State Current Storage Temperature Junction Temperature VDRM, VRRM IT(RMS) ITSM I 2t PGM PG (AV) IFGM VFGM VRGM di/dt Tstg TJ www.DataSheet.co.kr CSD -8M 600 8.0 80 32 40 1.0 4.0 16 5.0 50 CSD -8N 800 UNITS V A A A 2s W W A V V A/µs °C °C -40 to +150 -40 to +125 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt Rated VDRM, VRRM Rated VDRM, VRRM, TC=125°C VD=12V, RL=10Ω IT=100mA VD=12V, RL=10Ω ITM=16A, tp=380µs VD=2 /3 VDRM, TC=125°C 200 TYP MAX 10 2.0 UNITS µA mA mA mA V V V/µs 3.0 7.3 0.9 1.3 15 20 1.5 1.8 R0 (20-May 2004) Datasheet pdf - http://www.DataSheet4U.net/ Central TM Semiconductor Corp. CSD-8M CSD-8N 8.0 AMP SCR 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE www.DataSheet.co.kr LEAD CODE: 1) ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)