TBB1005

TBB1005 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0843-0900 Rev.9.00 Aug 22, 2006 Features Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Provide mini mold packages; CMPAK-6 Outline RENESAS Package code: PTSP0006JA-A (Package name: CMPAK-6) 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1) Notes: 1. Marking is “EM”. 2. TBB1005 is individual type number of RENESAS TWIN BBFET. www.DataSheet.co.kr Rev.9.00 Aug 22, 2006 page 1 of 9 Datasheet pdf - http://www.DataSheet4U.net/ TBB1005 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Symbol VDS VG1S VG2S Ratings 6 +6 -0 +6 -0 30 250 150 –55 to +150 Unit V V V mA mW °C °C Drain current ID Channel power dissipation Pch*3 Channel temperature Tch Storage temperature Tstg Notes: 3. Value on the glass epoxy board (49mm × 38mm × 1mm). Electrical Characteristics (Ta = 25°C) The below specification are applicable for UHF unit (FET1) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage...