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RJU60C1SDPD Dataheets PDF



Part Number RJU60C1SDPD
Manufacturers Renesas
Logo Renesas
Description Single Diode Fast Recovery Diode
Datasheet RJU60C1SDPD DatasheetRJU60C1SDPD Datasheet (PDF)

Preliminary Datasheet RJU60C1SDPD Single Diode Fast Recovery Diode Features • Fast reverse recovery time: trr = 60 ns typ. (at IF = 3 A, di/dt = 100 A/μs) • Low forward voltage: VF = 1.4 V typ. (at IF = 5 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V) R07DS0372EJ0100 Rev.1.00 Apr 26, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 2, 4 1. 2. 3. 4. Anode Cathode Anode Cathode 12 3 1 3 Absolute Maximum Ratings (Ta = 25°C) Item Maximum reverse voltage Aver.

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Preliminary Datasheet RJU60C1SDPD Single Diode Fast Recovery Diode Features • Fast reverse recovery time: trr = 60 ns typ. (at IF = 3 A, di/dt = 100 A/μs) • Low forward voltage: VF = 1.4 V typ. (at IF = 5 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V) R07DS0372EJ0100 Rev.1.00 Apr 26, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 2, 4 1. 2. 3. 4. Anode Cathode Anode Cathode 12 3 1 3 Absolute Maximum Ratings (Ta = 25°C) Item Maximum reverse voltage Average rectified forward current Continuous forward current Tc = 25°C Tc = 100°C Peak surge forward current Junction to case thermal resistance Junction temperature Storage temperature Symbol VRM Io IF IF IFSM θj-cd Tj Tstg Ratings 600 3 5 3 36 6.6 150 –55 to +150 Unit V A A A A °C/W °C °C www.DataSheet.co.kr Electrical Characteristics (Ta = 25°C) Item Forward Voltage Reverse current Reverse Recovery Time Symbol VF IR trr Min ⎯ ⎯ ⎯ Typ 1.4 ⎯ 60 Max 2.0 1 ⎯ Unit V μA ns Test conditions IF = 5 A VR = 600 V IF = 3 A, di/dt = 100 A/μs R07DS0372EJ0100 Rev.1.00 Apr 26, 2011 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.net/ RJU60C1SDPD Preliminary Main Characteristics Forward Current vs. Forward Voltage (Typical) 100 100 Reverse Recovery Time vs. di/dt Reverse Recovery Time trr (ns) Forward Current IF (A) IF = 3 A Ta = 25°C 80 10 60 1 Ta = 150 °C 25 °C 40 20 0.1 0 1 2 3 4 0 0 40 80 120 160 200 Forward Voltage VF (V) di/dt (A/μs) Capacitance vs. Reverse Voltage (Typical) Ta = 25°C Thermal Impedance vs. Pulse Width Thermal Impedance θj – c (°C/W) 100 100 Capaitace Cj (pF) 10 10 1 www.DataSheet.co.kr 0.1 Tc = 25°C Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 1 0.1 1 10 100 1000 Reverse Voltage VR (V) Pulse Width PW (s) R07DS0372EJ0100 Rev.1.00 Apr 26, 2011 Page 2 of 3 Datasheet pdf - http://www.DataSheet4U.net/ RJU60C1SDPD Preliminary Package Dimensions Package Name TO-252 JEITA Package Code ⎯ RENESAS Code PRSS0004ZJ-A Previous Code ⎯ MASS[Typ.] 0.319g Unit: mm 1.5 ± 0.5 6.5 ± 0.3 (5.6 ± 0.5) 2.3 ± 0.2 0.55 ± 0.1 (5.1) 5.5 ± 0.5 1.2 Max 0.25 Max 2.5 ± 0.5 (1.2) 2.29 ± 0.5 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 Ordering Information Orderable Part Number RJU60C1SDPD-E0-J2 3000 pcs www.DataSheet.co.kr Quantity Taping (5.1) Shipping Container R07DS0372EJ0100 Rev.1.00 Apr 26, 2011 Page 3 of 3 Datasheet pdf - http://www.DataSheet4U.net/ Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics produc.


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